Methods for forming structures for MRAM applications
US10497858B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications, particularly for spin-orbit-torque magnetic random access memory (SOT MRAM) applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a magnetic tunnel junction (MTJ) pillar structure disposed on a substrate, and a gap surrounding the MTJ pillar structure. In yet another embodiment, a magnetic tunnel junction (MTJ) device structure includes a spacer layer surrounding a patterned reference layer and a tunneling barrier layer disposed on a patterned free layer, and a gap surrounding the patterned free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.