Semiconductor device having epitaxial layer with planar surface and protrusions
US10505041B2 · kind B2 · utility
0Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Oct 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a gate structure on the substrate; and an epitaxial layer in the substrate adjacent to the gate structure, in which the epitaxial layer includes a planar surface and protrusions adjacent to two sides of the planar surface. Preferably, a contact plug is embedded in part of the epitaxial layer, and a silicide is disposed under the contact plug, in which a bottom surface of the silicide includes an arc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.