Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

US10510846B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ralf Siemieniec · Villach, AT
• Oliver Blank · Villach, AT
• Franz Hirler · Isen, DE
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Cedric Ouvrard · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: Feb 20, 2017
• Grant date: Dec 17, 2019
• Expiry date: Apr 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The first field plate structures form a first portion of a regular pattern and the second field plate structures form a second portion of the same regular pattern.