Patent · US Active

Semiconductor devices and methods for forming semiconductor devices

US10516065B2 · kind B2 · utility

0Cited by

8References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Anton Mauder · Kolbermoor, DE
Frank Pfirsch · Birkenfeld, DE
Hans-Joachim Schulze · Taufkirchen, DE
Philipp Seng · Munich, DE
Armin Willmeroth · Friedberg, DE

Key dates

Filing date	Jul 6, 2017
Grant date	Dec 24, 2019
Priority date	—
Expiry date	Jul 6, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.