Susceptor design to eliminate deposition valleys in the wafer

US10519547B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Karthik Ramanathan · Survanagiri, IN
• Kartik Shah · Saratoga, US
• Nyi O. Myo · San Jose, US
• Schubert S. Chu · San Francisco, US
• Jeffrey Tobin · Mountain View, US
• Errol Antonio C. Sanchez · Tracy, US
• Palamurali GAJENDRA · Bengaluru, IN

Key dates

• Filing date: Jan 19, 2016
• Grant date: Dec 31, 2019
• Expiry date: Jan 19, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68735
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.