Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment
US10522343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2015 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Dec 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device is provided in several embodiments. According to one embodiment, the method includes providing a substrate in a process chamber, flowing a process gas consisting of hydrogen (H2) and optionally a noble gas into the process chamber, forming plasma excited species from the process gas by a microwave plasma source. The method further includes exposing an interface layer on the substrate to the plasma excited species to form a modified interface layer, and depositing a high dielectric constant (high-k) film by atomic layer deposition (ALD) on the modified interface layer. In some embodiments, the modified interface layer has higher electrical mobility than the interface layer, and the high-k film nucleates at a higher rate on the modified interface layer rate than on the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.