Connector formation methods and packaged semiconductor devices
US10522486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.