Multi-cycle ALD process for film uniformity and thickness profile modulation

US10526701B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Purushottam Kumar · Hillsboro, US
• Adrien LaVoie · Newberg, US
• Hu Kang · Tualatin, US
• Jun Qian · Sunnyvale, US
• Tuan Nguyen · Woburn, US
• Ye Wang · Cupertino, US

Key dates

• Filing date: Jul 30, 2015
• Grant date: Jan 7, 2020
• Expiry date: Jul 30, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45536
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.