Method of plasma etching of silicon-containing organic film using sulfur-based chemistry

US10529589B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Erdinc Karakas · Hillsboro, US
• Li Wang · Evanston, US
• Andrew Nolan · Albany, US
• Christopher Talone · Albany, US
• Shyam Sridhar · Albany, US
• Alok Ranjan · Austin, US
• Hiroto Ohtake · Rifu, JP

Key dates

• Filing date: Jun 1, 2018
• Grant date: Jan 7, 2020
• Expiry date: Jun 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.