Annealing method for improving bonding strength
US10529590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.