Patent · US Active

Semiconductor device having a variable carbon concentration

US10529838B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Moriz Jelinek · Villach, AT
Johannes Georg Laven · Taufkirchen, DE
Helmut Oefner · Zorneding, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Dec 4, 2017
Grant date	Jan 7, 2020
Priority date	—
Expiry date	Dec 4, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D12/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.