Apparatus and method for wafer thinning in advanced packaging applications
US10541180B2 · kind B2 · utility
0Cited by
9References
31Claims
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Key dates
| Filing date | Feb 23, 2018 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Apr 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.