Optical emission spectroscopic techniques for monitoring etching
US10541184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2017 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Jul 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.