Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device

US10541261B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• PMD TECHNOLOGIES AG · DE

Inventors

• Robert Joseph Roessler · Rowlett, US
• Henning Feick · Dresden, DE
• Matthias Franke · Haiger, DE
• Dirk Offenberg · Dresden, DE
• Stefano Parascandola · Dresden, DE
• Jens Prima · Gehrde, DE

Key dates

• Filing date: Oct 13, 2017
• Grant date: Jan 21, 2020
• Expiry date: Dec 10, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G01S17/894
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.