Selective deposition of aluminum and nitrogen containing material
US10553482B2 · kind B2 · utility
17Cited by
63References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.