SiC semiconductor device with offset in trench bottom

US10553685B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Siemieniec · Villach, AT
• Thomas Aichinger · Faak am See, AT
• Romain Esteve · Munich, DE
• Daniel Kueck · Villach, AT

Key dates

• Filing date: Apr 23, 2018
• Grant date: Feb 4, 2020
• Expiry date: Apr 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A semiconductor device includes a trench extending from a first surface into a SiC semiconductor body. The trench has a first sidewall, a second sidewall opposite to the first sidewall, and a trench bottom. A gate electrode is arranged in the trench and is electrically insulated from the SiC semiconductor body by a trench dielectric. A body region of a first conductivity type adjoins the first sidewall. A shielding structure of the first conductivity type adjoins at least a portion of the second sidewall and the trench bottom. A first section of the trench bottom and a second section of the trench bottom are offset to one another by a vertical offset along a vertical direction extending from the first surface to a second surface of the SiC semiconductor body opposite to the first surface.