Semiconductor electrostatic discharge protection device
US10559560B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/911
Abstract
The present disclosure provides a semiconductor ESD protection device. The semiconductor ESD protection device includes a substrate including a first conductivity type, a gate formed on the substrate, a source region and a drain region formed in the substrate, and a body region formed in the substrate. The substrate and the body region include a first conductivity type. The source region and the drain region include a second conductivity type. And the first conductivity type and the second conductivity type are complementary to each other. The body region is electrically connected to the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.