Patent · US Active

Wrap-all-around contact for nanosheet-FET and method of forming same

US10559656B2 · kind B2 · utility

6Cited by

7References

9Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Emilie Bourjot · Cohoes, US
Julien Frougier · Albany, US
Yi Qi · Niskayuna, US
Ruilong Xie · Niskayuna, US
Hui Zang · Guilderland, US
Hsien-Ching Lo · Clifton Park, US
Zhenyu Hu · Leonberg, DE

Key dates

Filing date	May 2, 2018
Grant date	Feb 11, 2020
Priority date	—
Expiry date	May 2, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/021
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Described herein are nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects described include nanosheet-FET structures having an air gap as a bottom isolation area to reduce parasitic S/D leakage to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.