Backside integration of RF filters for RF front end modules and design structure
US10559743B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.