Patent · US Active

Optimization of integrated circuit reliability

US10564214B2 · kind B2 · utility

1Cited by
7References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 22, 2017
Grant dateFeb 18, 2020
Priority date
Expiry dateApr 27, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/50
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.