Patent · US Active

Method for determining a focus position of a lithography mask and metrology system for carrying out such a method

US10564551B2 · kind B2 · utility

0Cited by
1References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2019
Grant dateFeb 18, 2020
Priority date
Expiry dateFeb 20, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F9/7026
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

For determining a focus position of a lithography mask (e.g., 5), a focus stack of a measurement region free of structures to be imaged is recorded and the speckle patterns of the recorded images are evaluated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.