Method for determining a focus position of a lithography mask and metrology system for carrying out such a method
US10564551B2 · kind B2 · utility
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1References
19Claims
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Key dates
| Filing date | Feb 20, 2019 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Feb 20, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For determining a focus position of a lithography mask (e.g., 5), a focus stack of a measurement region free of structures to be imaged is recorded and the speckle patterns of the recorded images are evaluated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.