Method of fabricating transistors, including ambient oxidizing after etchings into barrier layers and anti-reflecting coatings
US10566200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Apr 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to fabricate a transistor comprises: forming a first dielectric layer on a semiconductor substrate; depositing a barrier layer on the first dielectric layer; depositing an anti-reflective coating on the barrier layer; depositing and exposing a pattern in a photoresist layer to radiation followed by etching to provide an opening; etching a portion of the anti-reflective coating below the opening; etching a portion of the barrier layer below the opening to expose a portion of the first dielectric layer; providing an ambient oxidizing agent to grow an oxide region followed by removing the barrier layer; implanting dopants into the semiconductor substrate after removing the barrier layer; removing the first dielectric layer after implanting dopants into the semiconductor substrate; and forming a second dielectric layer after removing the first dielectric layer, wherein the oxide region is grown to be thicker than the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.