Methods of filling horizontally-extending openings of integrated assemblies
US10573661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2019 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Mar 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a method of forming an integrated structure. An assembly is formed to include a stack of alternating first and second levels. The first levels have insulative material, and the second levels have voids which extend horizontally. The assembly includes channel material structures extending through the stack. A first metal-containing material is deposited within the voids to partially fill the voids. The deposited first metal-containing material is etched to remove some of the first metal-containing material from within the partially-filled voids. Second metal-containing material is then deposited to fill the voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.