Differentially pumped reactive gas injector
US10580628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Mar 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.