Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
US10580661B2 · kind B2 · utility
2Cited by
15References
18Claims
0Family size
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Key dates
| Filing date | May 1, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.