Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit products
US10580701B1 · kind B1 · utility
1Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Oct 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A method of forming a gate structure in a gate cavity laterally defined by a sidewall spacer and recessing the sidewall spacer so as to form a recessed sidewall spacer with a recessed upper surface is disclosed. In this example, the method also includes performing at least one etching process to form a tapered upper surface on the exposed portion of the gate structure above the recessed upper surface of the spacer and forming a gate cap above the tapered upper surface of the gate structure and above the recessed upper surface of the recessed sidewall spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.