Patent · US Active

Method for manufacturing semiconductor devices

US10580753B2 · kind B2 · utility

2Cited by

4References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Mischitz · Wernberg, AT
Harald Huber · Feldkirchen in Kärnten, AT
Michael Knabl · Sattendorf, AT
Claudia Sgiarovello · Villach, AT
Caterina Travan · Munich, DE
Andrew Christopher Graeme Wood · St. Jakob im Rosental, AT

Key dates

Filing date	Jul 21, 2017
Grant date	Mar 3, 2020
Priority date	—
Expiry date	Jul 21, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L25/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.