Super junction MOS bipolar transistor having drain gaps
US10580884B2 · kind B2 · utility
1Cited by
12References
16Claims
0Family size
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Key dates
| Filing date | Mar 5, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Mar 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.