Selective deposition of metal silicides

US10586707B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Raymond Hung · Palo Alto, US
• Namsung Kim · Yongin-si, KR
• Srinivas D. Nemani · Sunnyvale, US
• Ellie Yieh · San Jose, US
• Jong Hun Choi · Incheon, KR
• Christopher Ahles · San Diego, US
• Andrew C. Kummel · San Diego, US

Key dates

• Filing date: Nov 13, 2018
• Grant date: Mar 10, 2020
• Expiry date: Nov 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/324
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.