Buried power rails
US10586765B2 · kind B2 · utility
31Cited by
152References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jun 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure provide a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a power rail formed in an isolation trench. The power rail is covered by a dielectric cap that isolates the power rail from conductive pattern structures on the dielectric cap. Further, an opening is selectively formed in the dielectric cap and is filled with conductive material to selectively connect a conductive pattern structure with the power rail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.