Method for direct bonding of III-V semiconductor substrates with a radical oxide layer
US10586783B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.