Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation
US10593593B2 · kind B2 · utility
1Cited by
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13Claims
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Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.