Strip process for high aspect ratio structure
US10599039B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 17, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.