Backside fin recess control with multi-hsi option
US10600810B2 · kind B2 · utility
2Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2015 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Sep 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention are directed to formation of fins with different active channel heights in a tri-gate or a Fin-FET device. In an embodiment, at least two fins are formed on a front side of the substrate. A gate structure extends over a top surface and a pair of sidewalls of at least a portion of the fins. In an embodiment, the substrate is thinned to expose the bottom surface of the fins. Next, backside etching may be performed on each fin to form active channel regions. The fins may be recessed to different depths, forming active channel regions with differing heights.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.