Method and apparatus for forming a thin layer
US10607832B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Oct 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.