Three-dimensional memory device containing replacement contact via structures and method of making the same
US10608010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alternating stack of insulating layers and sacrificial material layers is formed with stepped surfaces. Sacrificial metal plates are formed on the top surfaces of the sacrificial material layers, and a retro-stepped dielectric material portion is formed over the sacrificial metal plates. Contact via cavities are formed through the retro-stepped dielectric material portion employing the sacrificial metal plates as etch stop structures. The sacrificial metal plates are replaced with portions of insulating spacer layers. Sacrificial via fill structures within remaining volumes of the contact via cavities. The sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are replaced with portions of staircase-region contact via structures that contact the electrically conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.