Low thickness dependent work-function nMOS integration for metal gate

US10608097B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Paul F. Ma · Santa Clara, US
• Seshadri Ganguli · Sunnyvale, US
• Shih Chung Chen · Hsinchu, TW
• Rajesh Sathiyanarayanan · Bengaluru, IN
• Atashi Basu · Menlo Park, US
• Lin Dong · Sunnyvale, US
• Naomi Yoshida · Sunnyvale, US
• Sang Ho Yu · Cupertino, US
• Liqi Wu · San Jose, US

Key dates

• Filing date: Jul 12, 2018
• Grant date: Mar 31, 2020
• Expiry date: Jul 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.