Inventor · San Jose, CA, US

Liqi Wu

22Patents
4h-index
77Co-inventors
62Inventor score

Filing activity: Dec 21, 2010 → Oct 17, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10014185B1 Selective etch of metal nitride films Electricity 8 Active
US8431033B2 High density plasma etchback process for advanced metallization applications Electricity 7 Active
US9194045B2 Continuous plasma and RF bias to regulate damage in a substrate processing system Electricity 5 Active
US9653352B2 Methods for forming metal organic tungsten for middle of the line (MOL) applications Electricity 4 Active
US9748354B2 Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof Electricity 4 Active
US10643840B2 Selective deposition defects removal by chemical etch Electricity 2 Active
US10608097B2 Low thickness dependent work-function nMOS integration for metal gate Electricity 2 Active
US10770292B2 Wafer treatment for achieving defect-free self-assembled monolayers Electricity 0 Active
US11450525B2 Selective aluminum oxide film deposition Chemistry; Metallurgy 0 Active
US10950433B2 Methods for enhancing selectivity in SAM-based selective deposition Electricity 0 Active
US12024770B2 Methods for selective deposition using self-assembled monolayers Performing Operations; Transporting 0 Active
US11421318B2 Methods and apparatus for high reflectivity aluminum layers Electricity 0 Active
US11033930B2 Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition Performing Operations; Transporting 0 Active
US10957590B2 Method for forming a layer Electricity 0 Active
US12094785B2 Dual silicide process using ruthenium silicide Electricity 0 Active
US11075276B2 Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors Electricity 0 Active
US11515155B2 Methods for enhancing selectivity in SAM-based selective deposition Electricity 0 Active
US12291779B2 Methods of selective atomic layer deposition Electricity 0 Active
US12351909B2 Gap fill methods using catalyzed deposition Electricity 0 Active
US12272551B2 Selective metal removal with flowable polymer Electricity 0 Active
US11821085B2 Methods of selective atomic layer deposition Electricity 0 Active
US11735420B2 Wafer treatment for achieving defect-free self-assembled monolayers Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.