Method and system for high temperature clean
US10612135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2017 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Jul 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32871
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.