Patent · US Active

Pnictide buffer structures and devices for GaN base applications

US10615141B2 · kind B2 · utility

0Cited by

3References

15Claims

0Family size

Assignee

IQE plc · GB

Inventors

Andrew Clark · Shrewsbury, US
Rytis Dargis · Greensboro, US
Michael S. Lebby · Apache Junction, US
Rodney Pelzel · Emmaus, US

Key dates

Filing date	Jun 2, 2017
Grant date	Apr 7, 2020
Priority date	—
Expiry date	Jun 2, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/17
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.