Method for producing IGBT with dV/dt controllability

US10615272B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Antonio Vellei · Villach, AT
• Markus Bina · Sauerlach, DE
• Matteo Dainese · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Alexander Philippou · Munich, DE
• Francisco Javier Santos Rodriguez · Villach, AT

Key dates

• Filing date: Oct 23, 2018
• Grant date: Apr 7, 2020
• Expiry date: Oct 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of processing a semiconductor device includes: providing a semiconductor body with a drift region; forming trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement having a lateral structure so that some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; subjecting the semiconductor body and the mask arrangement to a dopant material providing step to form a plurality of doping regions of a second conductivity type below bottoms of the exposed trenches; removing the mask arrangement; subjecting the semiconductor body to a temperature annealing step so that the doping regions extend in parallel to the first lateral direction and overlap to form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.