Patent · US Active

ALD method and apparatus

US10619241B2 · kind B2 · utility

1Cited by

3References

16Claims

0Family size

Assignee

Picosun Oy · FI

Inventors

Timo Malinen · Espoo, FI
Juhana Kostamo · Espoo, FI
Wei Li · Espoo, FI
Tero Pilvi · Helsinki, FI

Key dates

Filing date	Nov 25, 2015
Grant date	Apr 14, 2020
Priority date	—
Expiry date	Nov 25, 2035

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/483
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.