Magnetic tunnel junctions suitable for high temperature thermal processing
US10622011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Mar 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.