Patent · US Active

Footing removal for nitride spacer

US10629473B2 · kind B2 · utility

1Cited by
940References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 9, 2016
Grant dateApr 21, 2020
Priority date
Expiry dateSep 9, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31116
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.