Self-aligned gate cut method and multilayer gate-cut pillar structure
US10629701B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes forming a sacrificial gate structure and a gate-cut structure within the sacrificial gate structure at a location positioned above the isolation material, the gate-cut structure having an upper portion and a lower portion, and forming a replacement gate cavity by removing the sacrificial gate structure and the lower portion of the gate-cut structure. The method further includes forming a final gate structure that includes forming a gate insulation layer of the final gate structure on all exposed surfaces of the upper portion of the gate-cut structure, removing the upper portion of the gate-cut structure, removing the exposed portion of the final gate structure to define a gate-cut opening that separates the final gate structure into the first and second final gate structures, and forming a gate separation structure in the gate-cut opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.