Efficient metal-insulator-metal capacitor

US10651266B2 · kind B2 · utility

Assignee

• TESSERA LLC · US

Inventors

• Kisup Chung · Slingerlands, US
• Isabel C. Estrada-Raygoza · Albany, US
• Hemanth Jagannathan · Niskayuna, US
• Chi-Chun Liu · Altamont, US
• Yann Mignot · Slingerlands, US
• Hao Tang · Slingerlands, US

Key dates

• Filing date: Aug 1, 2018
• Grant date: May 12, 2020
• Expiry date: Aug 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

Capacitors include a stack that has a first metallic layer formed over a substrate with at least one high domain and at least one low domain, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. A bottom contact is formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain. A cap layer is formed directly on the substrate in the high domains, under the stack.