EUV pattern transfer with ion implantation and reduced impact of resist residue
US10658180B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Nov 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is presented for amplifying extreme ultraviolet (EUV) lithography pattern transfer into a hardmask and preventing hard mask micro bridging effects due to resist residue in a semiconductor structure. The method includes forming a top hardmask over an organic planarization layer (OPL), depositing a photoresist over the top hardmask, patterning the photoresist using EUV lithography, performing ion implantation to create doped regions within the exposed top hardmask and regions of hardmask underneath resist residue, stripping the photoresist, and selectively etching the top hardmask by either employing positive tone or negative tone etch based on an implantation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.