Cut inside replacement metal gate trench to mitigate N-P proximity effect

US10658363B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Balaji Kannan · Clifton Park, US
• Ayse M. Ozbek · Malta, US
• Tao Chu · Portland, US
• Bala Haran · Columbia, US
• Vishal Chhabra · Ossining, US
• Katsunori Onishi · Fishkill, US
• Guowei Xu · Lawrence, US

Key dates

• Filing date: Sep 6, 2019
• Grant date: May 19, 2020
• Expiry date: Sep 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.