Bala Haran
11Patents
4h-index
38Co-inventors
56Inventor score
Filing activity: Aug 2, 2002 → Sep 6, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8673699B2 | Semiconductor structure having NFET extension last implants | Electricity | 12 | Active |
| US8546203B1 | Semiconductor structure having NFET extension last implants | Electricity | 7 | Active |
| US6753039B2 | Electrolytic and electroless process for treating metallic surfaces and products formed thereby | Chemistry; Metallurgy | 6 | Expired |
| US8691687B2 | Superfilled metal contact vias for semiconductor devices | Electricity | 5 | Active |
| US10461173B1 | Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor | Electricity | 4 | Active |
| US10566328B2 | Integrated circuit products with gate structures positioned above elevated isolation structures | Electricity | 0 | Active |
| US10658363B2 | Cut inside replacement metal gate trench to mitigate N-P proximity effect | Electricity | 0 | Active |
| US9269611B2 | Integrated circuits having gate cap protection and methods of forming the same | Electricity | 0 | Active |
| US10991689B2 | Additional spacer for self-aligned contact for only high voltage FinFETs | Electricity | 0 | Active |
| US10446550B2 | Cut inside replacement metal gate trench to mitigate N-P proximity effect | Electricity | 0 | Active |
| US10741668B2 | Short channel and long channel devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.