Trench MOSFET device and the preparation method thereof
US10665551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. A semiconductor substrate of a first conductivity type is provided. A plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate are formed. A plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular to the first direction in a second preset area of the semiconductor substrate are formed. The plurality of first trenches and the plurality of second trenches are filled with a conductive material so as to form a plurality of control gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.